| Original Articles |
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Strong Green Light Emission from Low-Temperature Grown a-SiNx:H Film after Different Oxidation Routes |
DONG Heng-Ping, HUANG Rui, WANG Dan-Qing, CHEN Kun-Ji, LI Wei, MA
Zhong-Yuan, XU Jun, HUANG Xin-Fan |
| State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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DONG Heng-Ping, HUANG Rui, WANG Dan-Qing et al 2008 Chin. Phys. Lett. 25 4147-4150 |
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Abstract Room-temperature deposited amorphous silicon nitride (a-SiNx:H) films exhibit intense green light emission after post-treated by plasma oxidation, thermal oxidation and natural oxidation, respectively. All the photoluminescence (PL) spectra are peaked at around 500nm, independent of oxidation method and excitation wavelength. Compared with the PL results from oxidized a-Si:H and as-deposited a-SiNx:H samples, it is indicated that not only oxygen but also nitrogen is of an important role in enhancing light emission from the oxidized a-SiNx:H. Combining the PL results with the analyses of the bonding configurations as well as chemical compositions of the films, the strong green light emission is suggested to be from radiative recombination in luminescent centres related to N--Si--O bonds.
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| Keywords:
78.55.-m
68.55.-a
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Received: 27 March 2008
Published: 25 October 2008
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| PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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68.55.-a
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(Thin film structure and morphology)
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