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Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN |
| HAO Guo-Dong, CHEN Yong-Hai |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Box 912, Beijing 100083 |
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| Cite this article: |
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HAO Guo-Dong, CHEN Yong-Hai 2008 Chin. Phys. Lett. 25 4139-4142 |
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Abstract We investigate the uniaxial strain effect in the c-plane on optical properties of wurtzite GaN based on k・p theory, the spin-orbit interactions are also taken into account. The energy dispersions show that the uniaxial strain in the c-plane gives an anisotropic energy splitting in the kx-ky plane, which can reduce the density of states. The uniaxial strain also results in giant in-plane optical polarization anisotropy, hence causes the threshold carrier density reduced. We clarify the relations between the uniaxial strain and the optical polarization properties. As a result, it is suggested that the compressive uniaxial strain perpendicular to the laser cavity direction in the c-plane is one of the preferable approaches for the efficient improvement of GaN-based laser performance.
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78.20.Ek
77.22.Ej
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Received: 15 May 2008
Published: 25 October 2008
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