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Effects of LSMO Buffer Layer on Crystalline Orientation and Ferroelectric Properties of Bi2.9Pr0.9Ti3O12 Thin Films Prepared by Radio-Frequency Magnetron Sputtering |
| WU Yun-Yi1,2, ZHANG Duan-Ming1, YU Jun2, ZHENG Chao-Dan1,2, WANG Yun-Bo2 |
| 1School of Physics, Huazhong University of Science and Technology, Wuhan 4300742Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074 |
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| Cite this article: |
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WU Yun-Yi, ZHANG Duan-Ming, YU Jun et al 2008 Chin. Phys. Lett. 25 4131-4134 |
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Abstract Ferroelectric Bi2.9Pr0.9Ti3O12/La0.67Sr0.33MnO3 (BPT/LSMO) films are fabricated on Pt(111)/TiO2/SiO2/Si substrates by rf-magnetron sputtering method. The influences of the LSMO deposition conditions and LSMO layer thickness on properties of BPT thin films are studied. The LSMO layer deposited at 300°C and 450°C favours preferred (117) orientation of BPT films, while deposited at 600°C for LSMO layer leads to strong (111)-preferred orientation of BPT film. With the LSMO buffer layer, the films exhibit improved ferroelectric properties and Pt/BPT/LSMO(20nm)/Pt capacitor shows the largest remnant polarization Pr of 18.4μC/cm2 at 14V. A similar change in dielectric constant with the increase of LSMO layer thickness is also observed and the highest dielectric constant of 342.7 is obtained for the Pt/BPT/LSMO(20nm)/Pt film. Compared with the Pt/BPT/Pt film, the Pt/BPT/LSMO/Pt films exhibit better fatigue endurance after 5×109 switching cycles. Moreover, the LSMO layer has apparent effect on leakage current density and the Pt/BPT/LSMO(20nm)/Pt film exhibits the lowest leakage current density.
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| Keywords:
77.80.-e
77.84.Dy
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Received: 22 July 2008
Published: 25 October 2008
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