| Original Articles |
|
|
|
|
Electromechanical Properties of Microcantilever Actuated by Enhanced Piezoelectric PZT Thick Film |
| LIU Hong-Mei1,3, ZHAO Quan-Liang2, CAO Mao-Sheng1,2, YUAN Jie4, DUAN Zhong-Xia2, QIU Cheng-Jun 2,3 |
| 1School of Materials Science and Chemistry, Harbin Engineering University, Harbin 1500012School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 1000813Key Laboratory of Integrated Circuit, Heilongjiang University, Harbin 1500804School of Information Engineering, Central University for Nationalities, Beijing 100081 |
|
| Cite this article: |
|
LIU Hong-Mei, ZHAO Quan-Liang, CAO Mao-Sheng et al 2008 Chin. Phys. Lett. 25 4128-4130 |
|
|
|
|
Abstract Pb(Zr0.53,Ti0.47)O3 (PZT) films with thicknesses of 0.8μm, 2μm and 4μm are prepared by a sol-gel method and their longitudinal piezoelectric coefficients are analysed. The results show that the PZT thick films, whose density is closer to bulk PZT, has the better crystallization, with d33 and density much larger than those of PZT thin films. A piezoelectric microcantilever actuated by a 4-μm-thick PZT film is fabricated and its displacement is measured in different frequencies and voltages. The displacement increases linearly with the increasing bias, and the maximum displacement of 0.544μm is observed at 30kHz for 5V bias. The resonant frequency obtained in the experiment matches quite well with the theoretical result, and it is shown that the resonant frequency of PZT microcantilever could be controlled and predicated.
|
| Keywords:
77.65.Bn
85.50.-n
85.85.+j
|
|
|
Received: 10 August 2008
Published: 25 October 2008
|
|
| PACS: |
77.65.Bn
|
(Piezoelectric and electrostrictive constants)
|
| |
85.50.-n
|
(Dielectric, ferroelectric, and piezoelectric devices)
|
| |
85.85.+j
|
(Micro- and nano-electromechanical systems (MEMS/NEMS) and devices)
|
|
|
|
|
|
[1] Jeon Y, Chung J S and No K 2000 J. Electroceram.
4 195
[2] Ma W, Li S W and Yu J L 2001 Piezoelect. Acoust.
23 18
[3] Duan Z X, Yuan J, Zhao Q L, Liu H M, Lin H B, Zhang W T
and Cao M S 2008 Chin. Phys. Lett. 25 1472
[4] Polcawich R G, Pulskamp J S, Judy D, Ranade P, Mckinstry S
T and Dubey M 2007 IEEE Trans. Microwave Theor. Tech. 12
2642
[5] Kobayashi T, Maeda R and Itoh T 2008 J. Micromech.
Microengin. 18 035025
[6] Binning G, Quate C F and Gerber C 1986 Phys. Rev.
Lett. 56 930
[7] Schroth A, Lee C, Matsumoto S and Maeda R 1999
Sensors Actuators 73 144
[8] Lee J H, Kim T S and Yoon K H 2004 Appl. Phys. Lett.
84 3187
[9] Lee J H, Hwang K S, Park J, Yoon K H, Yoon D S and Kim T S
2005 Biosens. Bioelectron. 20 2157
[10] Shen D N, Park J H, Ajitsaria J, Choe S Y, Wikle H C and
Kim D J 2008 J. Micromech. Microengin. 18 055017
[11] Zhang D Q, Wang S J, Sun H S, Wang X L and Cao M S 2007
J. Sol-Gel. Sci. Tech. 41 157
[12] Liu H M, Zhao Q L, Qiu C J and Cao M S 2008 Key Eng.
Mater. 368-372 223
[13] Zhao Q L, Yuan J, Liu H M, Duan Z X, Zhang W T, Qiu C J
and Cao M S 2008 Chin. Phys. Lett. 25 1359
[14] He X Y, Ding A L, Zheng X S, Qiu P S and Luo W G 2003
Microelectron. Engin. 66 865
[15] Lu J, Zhang Y, Kobayashi T, Maeda R and Mihara T 2007
Sensors Actuators A 139 152
[16] Park J H, Kwon T Y, Yoon D S, Kim H and Kim T S 2005
Adv. Funct. Mater. 15 2021
[17] Lin H B, Cao M S, Zhao Q L, Shi X L, Wang D W and Wang F
C 2008 Script. Mater. 59 780 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
