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Electrical and Magnetic Properties of FeSi2 Nanowires |
| PENG Zu-Lin1, S. Liang2 |
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1School of Science, Beijing Institute of Technology, Beijing 1000812Science and Engineering of Materials Program, Arizona State University, Tempe, AZ, 85287, USA |
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| Cite this article: |
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PENG Zu-Lin, S. Liang 2008 Chin. Phys. Lett. 25 4113-4116 |
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Abstract We report the characterization of self-assembled epitaxially grown FeSi2 nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm×5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi2 NW is estimated to be 225μ\Ω ・cm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3±0.1 Bohr magneton per iron atom for these FeSi2 NWs.
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73.63.Nm
75.75.+a
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Received: 17 July 2008
Published: 25 October 2008
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