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Influence of Grain Size on Electrical and Optical Properties of InP Films |
| Mustafa Öztas |
| Engineering Faculty Department of Engineering Physics, Gaziantep University, 27310-Gaziantep, Turkey |
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Mustafa Ö, ztas 2008 Chin. Phys. Lett. 25 4090-4092 |
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Abstract InP film samples were prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which were atomized with compressed air as carrier gas onto glass substrates at 500°C with different thicknesses of the films. It is found that the resistivity of the polycrystalline films strongly depends on the grain size. It is observed that the grain size of the films increase with the decrease of the energy band gap and strain of the film. The changes observed in the energy band gap and strain related to the film grain size of the films are discussed in detail.
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| Keywords:
71.20.Nr
73.61.Ey
78.30.Fs
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Received: 31 March 2008
Published: 25 October 2008
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[1] Kazmerski L L 1980 Polycrystalline and Amorphous Thin
Films and Devices (New York: Academic)
[2] Lee M K, Wuu D S and Herng R H 1993 Appl. Phys.
Lett. 62 1140
[3] Ito K and Nakazowa T 1988 J. Appl. Phys. 58
2638
[4] Li X, Wanless M W, Gessert T A, Emery K A and Coutts T J
1989 Appl. Phys. Lett. 54 2674
[5] Byrne E K, Parkanyi L and Thepold K H 1988 Science
241 332
[6] Guzelian A A, Katari J E B, Kadavanich A V, Banin U, Hamad
K, Juban E, Alivisators A P, Wolters R H and Arnold C C 1996 J.
Phys. Chem. 100 7212
[7] Bedir M, Oztas M, Bakkaloglu O F and Ormanci R B 2005
Eur. Phys. J. 45 465
[8] Aksoy F, Kayali, Oztas M and Bedir M 2008 J. Phys.
Chem. Sol. 69 835
[9] Harper J M E, Cabral Jr C, Andricacos P C, Gignac L,
Noyan I C, Rodbell K P and Hu C K 1999 J. Appl. Phys.
86 2518
[10] Kale S S and Lokhande C D 2000 Mater. Chem. Phys.
62 103
[11] Maissel L I and Glang R 1970 Handbook of Thin Film
Technology (New York: McGraw-Hill)
[12] Tiburcio-Silver A, Joubert J C and Labeau M 1991
Thin Solid Films 197 195
[13] Oztas M and Yaz{\ic{\i 2004 J. Lumin. 110
31
[14] Tian G L, He H B and Shao J D 2005 Chin. Phys.
Lett. 22 1787
[15] Rakshani A E and Al-Azab A S 2000 J. Phys.: Condens.
Matter. 12 8745
[16] Ghosh R, Basak D and Fujihara S 2004 J. Appl. Phys.
96 2689
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