| Original Articles |
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Effect of Silane Flow Rate on Structure and Corrosion Resistance of Ti-Si-N Thin Films Deposited by a Hybrid Cathodic Arc and Chemical Vapour Process |
| YIN Long-Cheng1,2, LUAN Sen1,2, LV Guo-Hua2, WANG Xing-Quan1,2, HUANG Jun1,2, JIN Hui1,2, FENG Ke-Cheng1,YANG Si-Ze2 |
| 1College of Science, Changchun University of Science and Technology, Changchun 1300222Institute of Physic, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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YIN Long-Cheng, LUAN Sen, LV Guo-Hua et al 2008 Chin. Phys. Lett. 25 4072-4075 |
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Abstract Ti--Si--N thin films with different silicon contents are deposited by a cathodic arc technique in an Ar+N2+SiH4 mixture atmosphere. With the increase of silane flow rate, the content of silicon in the Ti--Si--N films varies from 2.0at.% to 12.2at.%. Meanwhile, the cross-sectional morphology of these films changes from an apparent columnar microstructure to a dense fine-grained structure. The x-ray diffractometer (XRD) and x-ray photoelectron spectroscopy (XPS) results show that the Ti--Si--N film consists of TiN crystallites and SiNx amorphous phase. The corrosion resistance is improved with the increase of silane flow rate. Growth defects in the films produced play a key role in the corrosion process, especially for the local corrosion. The porosity of the films decreases from 0.13% to 0.00032% by introducing silane at the flow rate of 14sccm.
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| Keywords:
52.75.-d
61.82.Rx
68.60.-p
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Received: 18 July 2008
Published: 25 October 2008
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| PACS: |
52.75.-d
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(Plasma devices)
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61.82.Rx
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(Nanocrystalline materials)
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68.60.-p
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(Physical properties of thin films, nonelectronic)
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