| Original Articles |
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Large Magnetoresistance Based on Double Spin Filter Tunnel Barriers |
| TANG Xiao-Li, ZHANG Huai-Wu, SU Hua, JING Yu-Lan |
| State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 |
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| Cite this article: |
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TANG Xiao-Li, ZHANG Huai-Wu, SU Hua et al 2008 Chin. Phys. Lett. 25 3769-3772 |
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Abstract
We propose and theoretically analyse a double magnetic tunnel device that takes advantages of the spin filter effect. Two magnetic tunnel barriers are formed by different spin filters which have different barrier heights. The magnetoresistance of the device is low (high) when the magnetic moments of the two spin filters are parallel (antiparallel). We present a theoretical calculation of the magnetoresistance based on electric tunnel effect. In addition, the effect of the difference barrier heights and exchange splitting energies between the two spin filters are also analysed in detail. The numerical results show that the spin filter in this configuration gives a magnetoresistance larger than that with standard magnetic tunnel junctions.
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| Keywords:
75.47.-m
72.25.-b
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Received: 12 January 2008
Published: 26 September 2008
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| PACS: |
75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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72.25.-b
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(Spin polarized transport)
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