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Electronic Raman Scattering in Graphene |
| LU Hong-Yan, WANG Qiang-Hua |
| National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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LU Hong-Yan, WANG Qiang-Hua 2008 Chin. Phys. Lett. 25 3746-3749 |
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Abstract Linear dispersion near the Dirac points in the band structure of graphenes can give rise to novel physical properties. We calculate the electronic contribution to the Raman spectra in graphenes, which also shows novel features. In the clean limit, the Raman spectrum in the undoped graphene is linear (with a universal slope against impurity scattering) at low energy due to the linear dispersion near the Dirac points, and it peaks at a position corresponding to the van Hove singularity in the band structure. In a doped graphene, the electronic Raman absorption is forbidden up to a vertical inter-band particle--hole gap. Beyond the gap the spectrum follows the undoped case. In the presence of impurities, absorption within the gap (in the otherwise clean case) is induced, which is identified as the intra-band contribution. The Drude-like intra-band contribution is seen to be comparable to the higher energy inter-band Raman peak. The results are discussed in connection to experiments.
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| Keywords:
72.80.Rj
78.67.-n
73.20.-r
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Received: 15 April 2008
Published: 26 September 2008
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| PACS: |
72.80.Rj
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(Fullerenes and related materials)
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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73.20.-r
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(Electron states at surfaces and interfaces)
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