| Original Articles |
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A Novel Super-Junction Lateral Double-Diffused Metal--Oxide--Semiconductor Field Effect Transistor with n-Type Step Doping Buffer Layer |
| CHENG Jian-Bing1;ZHANG Bo1;DUAN Bao-Xing1;2;LI Zhao-Ji1 |
| 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 6100542School of Microelectronics, Xidian University, Xi'an 710071 |
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| Cite this article: |
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CHENG Jian-Bing, ZHANG Bo, DUAN Bao-Xing et al 2008 Chin. Phys. Lett. 25 262-265 |
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Abstract A novel super-junction lateral double-diffused metal--oxide--semiconductor field effect transistor (SJ-LDMOSFET) with n-type step doping buffer layer is proposed. The step doping buffer layer almost completely eliminates the
substrate-assisted depletion effect, modulates lateral electric field and achieves nearly uniform surface field. On the other hand, the buffer layer also provides another conductive path and reduces on-state resistance. In short, the proposed LDMOSFET improves trade-off performance between breakdown voltage (BV) and specific on-state resistance Ron,sp. Compared with the conventional SJ-LDMOSFET, the simulation results indicate that the BV of the
SSJ-LDMOSFET is increased from saturation voltage 121.7V to 644.9V; at the same time, the specific on-state resistance is decreased from 0.314Ω•cm2 to
0.14Ω•cm2 by virtue of 3D numerical simulations using ISE when the drift region length and the step number are taken as 48μm and 3, respectively.
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| Keywords:
73.40.Qv
71.20.Mq
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Received: 23 August 2007
Published: 27 December 2007
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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71.20.Mq
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(Elemental semiconductors)
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[1] Chen X B and Johnny K O 2001 IEEE Trans. Electron. Devices 48 344
[2] Chen X B, Mawby P A, Board K et al 1998 Microelectron.J. 29 1005
[3] Onishi Y, Iwamoto S et al 2002 Proc. ISPSD 2002 241
[4] Dig F T 1998 J. Appl. Phys. 1998 683
[5] Sameh G, Nassif-Khalil et al 2004 IEEE Trans. Electron.Devices 51 1185
[6] Nassif-Khalil S G and Salama C A T 2003 IEEE Trans. Electron.Devices 50 1385
[7] Ng R, Udrea F, Sheng K et al 2001 Proc. ISPSD 2001 395
[8] Park I Y and Salama C A T 2005 Proc. ISPSD 2005 163
[9] Zhang B, Chen L et al 2005 Proc. ICCCAS 2005 1399
[10] Shenoy P M, Bhalla A and Dolny G M 1999 Proc. ISPSD 1999 99
[11] ISE TCAD Manuals, release 10.0
[12] Strollo A G M and Napoli E 2001 IEEE Trans. Electron.Devices 48 2010 |
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