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AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template |
SANG Li-Wen1;QIN Zhi-Xin1;CEN Long-Bin1;SHEN Bo1;ZHANG Guo-Yi1;LI Shu-Ping2;CHEN Hang-Yang2;LIU Da-Yi2;KANG Jun-Yong2;CHENG Cai-Jing3;ZHAO Hong-Yan3,LU Zheng-Xiong3;DING Jia-Xin3;ZHAO Lan3;SI Jun-Jie3;SUN Wei-Guo3 |
| 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Research Center for Wide Gap Semiconductor, School of Physics, Peking University, Beijing 1008712Department of Physics and Photonics Research Center, Xiamen University, Xiamen 3610053Luoyang Optoelectronic Institute, Luoyang 471009 |
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| Cite this article: |
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SANG Li-Wen, QIN Zhi-Xin, CEN Long-Bin et al 2008 Chin. Phys. Lett. 25 258-261 |
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Abstract We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff-wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1i×10-6A/cm2 at the reverse
bias of 5V. The specific detectivity D* is estimated to be 3.3×1012cmHz1/2W-1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current.
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| Keywords:
73.40.Kp
85.60.Gz
81.05.Ea
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Received: 17 July 2007
Published: 27 December 2007
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| PACS: |
73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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81.05.Ea
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(III-V semiconductors)
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