Chin. Phys. Lett.  2008, Vol. 25 Issue (1): 234-237    DOI:
Original Articles |
Strong Surface Diffusion Mediated Glancing-Angle Deposition: Growth, Recrystallization and Reorientation of Tin Nanorods
WANG Huan-Hua1;SHI Yi-Jian2;William CHU2;Yigal BLUM2
1Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 1000492SRI International, Menlo Park, CA 94025, USA
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WANG Huan-Hua, SHI Yi-Jian, William CHU et al  2008 Chin. Phys. Lett. 25 234-237
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Abstract Different from usual glancing-angle deposition where low surface diffusion is necessary to form nanorods, strong surface diffusion mediated glancing-angle deposition is exemplified by growing tin nanorod films on both silicon and glass substrates simultaneously via thermal evaporation. During growth, the
nanorods were simultaneously baked by the high-temperature evaporator, and therefore re-crystallized into single crystals in consequence of strong surface diffusion. The monocrystalline tin nanorods have a preferred orientation perpendicular to the substrate surface, which is quite different from the usual uniformly oblique nanorods without recrystallization.
Keywords: 64.70.Nd      81.15.Kk      81.07.-b      81.40.Gh     
Received: 27 August 2007      Published: 27 December 2007
PACS:  64.70.Nd (Structural transitions in nanoscale materials)  
  81.15.Kk (Vapor phase epitaxy; growth from vapor phase)  
  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
  81.40.Gh (Other heat and thermomechanical treatments)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I1/0234
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Articles by authors
WANG Huan-Hua
SHI Yi-Jian
William CHU
Yigal BLUM
[1] Peng X and Chen A 2005 Appl. Phys. A: Mat. Sci. Proc. 80 473
[2] Kayes B M, Atwater HA and Lewis N S 2005 J. Appl.Phys. 97 14302
[3] Robbie K and Brett M J 1997 J. Vac. Sci. Technol. A 15 1460
[4] Zhao Y P et al %, Ye D X, Wang P I, Wang G C and Lu T M2002 Intl. J. Nanosci. 1 87
[5] Wang H H and Zhao Y P 2006 J. Vac. Sci. Techol. B 24 1230
[6] Harris K D, Vick D, Smy T and Brett M J 2002 J. Vac. Sci.Technol. A 20 2062
[7] Zhao Y Pet al %, Ye D X, Wang G C and Lu T M2002 Nano Lett. 2 351
[8] Schubert E et al %, Fahlteich J, Rauschenbach B, Schubert M, Lorenz%M, Grundmann M and Wagner G2006 J. Appl. Phys. 100 016107
[9] Suzuki M et al %, Ito T and Taga Y2001 Appl. Phys. Lett. 78 3968
[10] Takeda Y et al 2006 Conference Record of the 2006IEEE 4th World Conference on Photovoltaic Energy Conversion 1/2 75
[11] Kolmakov A et al %, Zhang Y and Moskvits M2003 Nano Lett. 3 1125
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