| Original Articles |
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P-BN/n-Si Heterojunction Prepared by Beryllium ion Implantation |
| HE Bin1,3;CHEN Guang-Hua1;LI Zhi-Zhong1;DENG Jin-Xiang2,ZHANG Wun-Jun3 |
| 1College of Materials Science and Technology, Beijing University of Technology, Beijing 1000222College of Applied Sciences, Beijing University of Technology, Beijing 1000223Center of Super-Diamond and Advance Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong |
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| Cite this article: |
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HE Bin, CHEN Guang-Hua, LI Zhi-Zhong et al 2008 Chin. Phys. Lett. 25 219-222 |
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Abstract A boron nitride (BN)/silicon p-n heterojunction is fabricated by implanting beryllium (Be) ions into the BN films deposited by rf sputtering on n-type Si (111) substrates. The FTIR observations indicate that the films deposited have a mixed phase composition of sp2- and sp3-hybridized BN. Considering the thickness of the BN layer, the ion implantation is conducted at an ion
energy of 100keV with the dose of 5×1015cm-2. After annealing at a high temperature, the surface resistance of the BN film decreases significantly by 6 orders down to 1.2×105Ω. Space-charge-limited current characteristic, which indicates the existence of shallow traps in the film, is observed. Current-voltage measurements across the BN film and the Si substrate reveal a clear
rectification feature, demonstrating the achievement of p-type doping of BN films by Be ion implantation.
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| Keywords:
61.72.Vv
73.40.Kp
72.20.-i
81.15.Cd
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Received: 13 July 2007
Published: 27 December 2007
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| PACS: |
61.72.Vv
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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81.15.Cd
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(Deposition by sputtering)
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