| Original Articles |
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Si Underlayer Induced Nano-Ablation in AgInSbTe Thin Films |
| JIAO Xin-Bing;WEI Jing-Song;GAN Fu-Xi |
| Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 |
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| Cite this article: |
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JIAO Xin-Bing, WEI Jing-Song, GAN Fu-Xi 2008 Chin. Phys. Lett. 25 209-211 |
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Abstract AgInSbTe/Si thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70nm in the
AgInSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.
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| Keywords:
61.43.Dq
67.80.Gb
68.18.Jk
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Received: 10 September 2007
Published: 27 December 2007
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| PACS: |
61.43.Dq
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(Amorphous semiconductors, metals, and alloys)
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67.80.Gb
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68.18.Jk
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(Phase transitions in liquid thin films)
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