| Original Articles |
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Ultraviolet Phototransistors on AlGaN/GaN Heterostructures |
| CHEN Chen1,2;JIANG Wen-Hai2;REN Chun-Jiang2;LI Zhong-Hui2;JIAO Gang2;DONG Xun2;CHEN Tang-Sheng2 |
| 1Department of Physics, Nanjing University, Nanjing 2100932National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016 |
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| Cite this article: |
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CHEN Chen, JIANG Wen-Hai, REN Chun-Jiang et al 2007 Chin. Phys. Lett. 24 2707-2709 |
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Abstract We report on the fabrication and characterization of phototransistors based on AlGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions: as a high electron mobility transistor (HEMT) and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170mS/mm, while the minimum cutoff frequency fT and the maximum oscillation frequency fm are 19 and 35GHz, respectively. As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude, and a responsivity as high as 1700A/W at the wavelength of 362nm.
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| Keywords:
85.60.Dw
73.61.Ey
78.66.Fd
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Received: 13 February 2007
Published: 16 August 2007
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| PACS: |
85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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73.61.Ey
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(III-V semiconductors)
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78.66.Fd
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(III-V semiconductors)
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