| Original Articles |
|
|
|
|
Electrical Characterization of Copper Phthalocyanine Thin-Film Transistors with Fluoride Gate Insulator |
| YU Shun-Yang1,2;YI Ming-Dong1;MA Dong-Ge1 |
| 1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
|
| Cite this article: |
|
YU Shun-Yang, YI Ming-Dong, MA Dong-Ge 2007 Chin. Phys. Lett. 24 2704-2706 |
|
|
|
Abstract Different fluoride materials are used as gate dielectrics to fabricate copper phthalocyanine (CuPc) thin film transistors (OTFTs). The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10-3 to 10-1cm2V-1s-1. The observed noticeable electron injection at the drain electrode is of great significance in
achieving ambipolar OTFTs. The same method for formation of organic
semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.
|
| Keywords:
85.30.Tv
81.15.Ef
|
|
|
Received: 02 March 2007
Published: 16 August 2007
|
|
|
|
|
|
|
|
[1] Bao Z, Lovinger A J and Dodabalapur A 1996 Appl. Phys. Lett. 69 3066
[2] Lee J, Hwang D K, Choi J M, Lee K, Kim J H and Im S, Park J H andKim E 2005 Appl. Phys. Lett. 87 023504
[3] Jang Y, Kim D H, Park Y D, Cho J H, Hwang M and Cho K 2006 Appl. Phys. Lett. 88 072101
[4] Gelinck G H, Huitema H E A et al 2004 Nature Mater. 3 106
[5] Gundlach D J and Jackson T N 1999 Appl. Phys. Lett. 74 3302
[6] Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley)
[7] Parker I D 1994 J. Appl. Phys. 75 1656
[8] de Boer R W I, Stassen A F, Craciun M F, Mulder C L, Molinari A,Rogge S and Morpurgo A F 2005 Appl. Phys. Lett. 86 262109
[9] Chua L L, Zaumseil J, Chang J F, Ou E C W, Ho P K H, Sirringhaus Hand Friend Richard H 2005 Nature 434 194
[10] Horowitz G, Hajlaoui M E and Hajlaoui R 2000 J. Appl. Phys. 87 4456
[11]Yu S Y, Yi M D and Ma D G 2006 Semicond. Sci. Technol. 21 1452
[12] Dimitrakopoulos C D, Purushothaman S, Kymissis J, Callegari A andShaw J M 1999 Science 283 822 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
