Chin. Phys. Lett.  2007, Vol. 24 Issue (9): 2657-2660    DOI:
Original Articles |
Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers
XIA Zheng-Yue;HAN Pei-Gao;XU Jun;CHEN De-Yuan;WEI De-Yuan;MA Zhong-Yuan;CHEN Kun-Ji;XU Ling;HUANG Xin-Fan
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
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XIA Zheng-Yue, HAN Pei-Gao, XU Jun et al  2007 Chin. Phys. Lett. 24 2657-2660
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Abstract Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.
Keywords: 73.21.Ac      73.21.La      78.55.-m     
Received: 16 March 2007      Published: 16 August 2007
PACS:  73.21.Ac (Multilayers)  
  73.21.La (Quantum dots)  
  78.55.-m (Photoluminescence, properties and materials)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I9/02657
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XIA Zheng-Yue
HAN Pei-Gao
XU Jun
CHEN De-Yuan
WEI De-Yuan
MA Zhong-Yuan
CHEN Kun-Ji
XU Ling
HUANG Xin-Fan
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