| Original Articles |
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GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition |
| YUE Yuan-Zheng;HAO Yue;FENG Qian;ZHANG Jin-Cheng;MA Xiao-Hua;NI Jin-Yu |
| Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071 |
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| Cite this article: |
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YUE Yuan-Zheng, HAO Yue, FENG Qian et al 2007 Chin. Phys. Lett. 24 2419-2422 |
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Abstract We report a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with atomic layer deposited (ALD) Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 (2005) 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device
fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of 100mS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0V. The gate leakage is two orders of magnitude lower than that of the conventional AlGaN/GaN HEMT.
The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.
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| Keywords:
85.30.Tv
73.40.Qv
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Received: 20 March 2007
Published: 25 July 2007
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| PACS: |
85.30.Tv
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(Field effect devices)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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