Chin. Phys. Lett.  2007, Vol. 24 Issue (8): 2408-2411    DOI:
Original Articles |
Controlled Growth of Zn-Polar ZnO Films on Al-Terminated α-Al2O3(0001) Surface by Using Wurtzite MgO Buffer
YUAN Hong-Tao1;LIU Yu-Zi1;WANG Xi-Na1;LI Han-Dong1;WANG Yong1;ZENG Zhao-Quan1;MEI Zeng-Xia1;DU Xiao-Long1;JIA Jin-Feng2;XUE Qi-Kun2,1;ZHANG Ze3
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1000802Department of Physics, Tsinghua University, Beijing 1000843Beijing University of Technology, Beijing 100022
Cite this article:   
YUAN Hong-Tao, LIU Yu-Zi, WANG Xi-Na et al  2007 Chin. Phys. Lett. 24 2408-2411
Download: PDF(757KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The controlled growth of Zn-polar ZnO films on Al-terminated αAl2O3 (0001) substrates is investigated by the radio-frequency plasma-assisted molecular beam epitaxy method. Prior to the growth, αAl2O3 (0001) surface is modified by an ultrathin MgO layer, which serves as a uniform template for epitaxy of
Zn-polar ZnO films. The microstructures of ZnO/MgO/Al2O3 interface are investigated by in-situ reflection high-energy electron diffraction observations and ex-situ high-resolution transmission electron microscopy characterization. It is found that under Mg-rich condition, the achievement of the wurtzite MgO ultrathin layer plays a key role in the subsequent growth of Zn-polar ZnO. An
interfacial atomic model is proposed to explain the mechanism of polarity selection of both MgO and ZnO films.
Keywords: 81.15.Hi      61.14.Hg      61.14.Lj     
Received: 10 May 2007      Published: 25 July 2007
PACS:  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
  61.14.Hg  
  61.14.Lj  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I8/02408
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
YUAN Hong-Tao
LIU Yu-Zi
WANG Xi-Na
LI Han-Dong
WANG Yong
ZENG Zhao-Quan
MEI Zeng-Xia
DU Xiao-Long
JIA Jin-Feng
XUE Qi-Kun
ZHANG Ze
[1] Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M,Ohtani K, Chichibu S F, Fuke S, Segawa Y, Ohno H, Koinuma H and M.Kawasaki 2005 Nature Material 4 42
[2] Bagnall D M, Chen Y F, Zhu Z, Yao T, Koyama S, Shen M Y and Goto T1997 Appl. Phys. Lett. 70 2230
[3] Sherriff R E, Reynold D C, Look D C, Jogai B, Hoelscher J E,Collins T C, Cantwell G and Harsch W C 2000 J. Appl. Phys. 88 3454
[4] Allen M W, Miller P, Reeves R J and Durbin S M2007 Appl. Phys. Lett. 90 062104
[5] Park S H and Ahn D 2005 Appl. Phys. Lett. 87 253509
[6] Allen M W, Alkaisi M M and Durbin S M 2006 Appl. Phys.Lett. 89 103520
[7] Kato H, Miyaomoto K, Sano M and Yao T 2004 Appl. Phys.Lett. 84 4562
[8]Matsui H and Tabata H 2007 Phys. Rev. B 75 014438
[9] Jain S C, Willander M, Narayan J and Overstraeten R V 2000 J. Appl. Phys. 87 965
[10] Mei Z X, Du X L, Wang Y, Ying M J, Zeng Z Q, Zheng H, Jia J F, XueQ K and Zhang Z 2005 Appl. Phys. Lett. 86 112111
[11] Mei Z X, Du X L, Wang Y, Ying M J, Zeng Z Q, Zheng H, Jia J F, XueQ K and Zhang Z 2004 J. Appl. Phys. 96 7108
[12] Chen Y F, Ko H J, Hong S K and Yao T 2000 Appl. Phys.Lett. 78 559
[13] Chen Y F, Hong S K, Ko H J, Kirshner V, Yao T, Inaba K and SegawaY 2001 Appl. Phys. Lett. 78 3352
[14] Walters C F, McCarty K F, Soares E A and Van Hove M A 2000 Surf. Sci. 464 L732
[15] Toofan J and Watson P R 1998 Surf. Sci. 401 162
[16] Godin T J and LaFemina J P 1994 Phys. Rev. B 49 7691
[17] Suzuki T, Hishita S, Oyoshi K, Souda R 1999 Surf. Sci. 437 289
[18] Gerthsen D, Litvinov D, Gruber Th, Kirchner C and Waag A 2002 Appl. Phys. Lett. 81 3972
Related articles from Frontiers Journals
[1] LIU Shao-Qing, HAN Qin, ZHU Bin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, WANG Win, NIU Zhi-Chuan. Tunable Metamorphic Resonant Cavity Enhanced InGaAs Photodetectors Grown on GaAs Substrates[J]. Chin. Phys. Lett., 2012, 29(3): 2408-2411
[2] PAN Jian-Hai, WANG Xin-Qiang**, CHEN Guang, LIU Shi-Tao, FENG Li, XU Fu-Jun, TANG Ning, SHEN Bo*** . Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2011, 28(6): 2408-2411
[3] QUAN Wei-Long, LI Hong-Xuan, ZHAO Fei, JI Li, DU Wen, ZHOU Hui-Di, CHEN Jian-Min. Molecular Dynamical Simulations on a-C:H Film Growth from C and H Atomic Flux: Effect of Incident Energy[J]. Chin. Phys. Lett., 2010, 27(8): 2408-2411
[4] QUAN Wei-Long, LI Hong-Xuan, ZHAO Fei, JI Li, DU Wen, ZHOU Hui-Di, CHEN Jian-Min. Molecular Dynamic Simulation on Graphitization and Dehydrogenization of Hydrogenated Carbon Films in Vacuum[J]. Chin. Phys. Lett., 2010, 27(7): 2408-2411
[5] REN Fan, HAO Zhi-Biao, ZHANG Chen, HU Jian-Nan, LUO Yi. High Quality AlN with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2010, 27(6): 2408-2411
[6] FU Ying-Shuang, JI Shuai-Hua, ZHANG Tong, CHEN Xi, JIA Jin-Feng, XUE Qi-Kun, MA Xu-Cun . Modifying Quantum Well States of Pb Thin Films via Interface Engineering[J]. Chin. Phys. Lett., 2010, 27(6): 2408-2411
[7] JI Hai-Ming, YANG Tao, CAO Yu-Lian, XU Peng-Fei, GU Yong-Xian, LIU Yu, XIE Liang, WANG Zhan-Guo. A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser[J]. Chin. Phys. Lett., 2010, 27(3): 2408-2411
[8] ZHU Bin, HAN Qin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, NIU Zhi-Chuan, WANG Xin, WANG Xiu-Ping, WANG Jie. Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs[J]. Chin. Phys. Lett., 2010, 27(3): 2408-2411
[9] KONG Ning, LIU Jun-Qi, LI Lu, LIU Feng-Qi, WANG Li-Jun, WANG Zhan-Guo. Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 μm Operating at Room Temperature[J]. Chin. Phys. Lett., 2010, 27(3): 2408-2411
[10] WU Rui, WANG Li-Li, ZHANG Yi, MA Xu-Cun, JIA Jin-Feng, XUE Qi-Kun,. Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)[J]. Chin. Phys. Lett., 2010, 27(2): 2408-2411
[11] LI Zhan-Guo, LIU Guo-Jun**, LI Lin, FENG Ming, LI Mei, LU Peng, ZOU Yong-Gang, LI Lian-He, GAO Xin. Strain-Engineered Low-Density InAs Bilayer Quantum Dots for Single Photon Emission[J]. Chin. Phys. Lett., 2010, 27(12): 2408-2411
[12] KONG Ning**, LIU Jun-Qi, LI Lu, LIU Feng-Qi, WANG Li-Jun, WANG Zhan-Guo, LU Wei . 10.7μm InGaAs/InAlAs Quantum Cascade Detector[J]. Chin. Phys. Lett., 2010, 27(12): 2408-2411
[13] LIU Jun-Qi, CHEN Jian-Yan, LIU Feng-Qi, LI Lu, WANG Li-Jun, WANG Zhan-Guo . Terahertz Quantum Cascade Laser Operating at 2.94THz[J]. Chin. Phys. Lett., 2010, 27(10): 2408-2411
[14] GU Yi, ZHANG Yong-Gang, LI Ai-Zhen, WANG Kai, LI Cheng, LIYao-Yao. Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice[J]. Chin. Phys. Lett., 2009, 26(7): 2408-2411
[15] WANG Peng-Fei, XIONG Yong-Hua, WANG Hai-Li, HUANG She-Song, NI Hai-Qiao, XU Ying-Qiang, HE Zhen-Hong, NIU Zhi-Chuan. GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2009, 26(6): 2408-2411
Viewed
Full text


Abstract