| Original Articles |
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Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD |
| ZHAO Mei1;CHEN Xiao-Long2;WANG Wen-Jun2;ZHANG Zhi-Hua2;XU Yan-Ping2 |
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| Cite this article: |
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ZHAO Mei, CHEN Xiao-Long, WANG Wen-Jun et al 2007 Chin. Phys. Lett. 24 2401-2404 |
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Abstract Ground by mechanical ball milling under certain conditions, β-Ga2O3 powders can transit to ε-Ga2O3 ones. As starting materials, Ga2O3 powders treated by
different methods are used to prepare GaN nanomaterials. It is found that the morphologies of GaN nanomaterials are quite different due to the phase transition of Ga2O3 from β-Ga2O3 to ε-Ga2O3.
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| Keywords:
81.05.Ea
81.16.-c
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Received: 22 March 2007
Published: 25 July 2007
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.16.-c
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(Methods of micro- and nanofabrication and processing)
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[1] Chen R S, Chen Y S, Huang Y S, Chen Y L, Chi Y, Liu C S, Tiong K Kand Carty A J 2003 Chem. Vapor Deposition 9 301
[2] Leung Y H, Djurisic A B, Gao J, Xie M H and Chan W K 2004 Chem. Phys. Lett. 385 155
[3] Kim T Y, Kim J Y, Kumar M S, Suh E K and Nahm K S 2004 J.Cryst. Growth 270 491
[4] Morkoc H, Mohammad S N 1995 Science 267 51
[5] Ponce F A, Bour D P 1997 Nature 386 351
[6] Gasol G 1996 Nature 272 1751
[7] Mohammad N, Morkoc H 1996 Prog. Quantum Electron. 20 361
[8] Wang J C, Feng S Q and Yu D P 2002 Appl. Phys. A 75 691
[9] Chen X L, Li J Y, Cao Y G, Lan Y C, Li H, He M, Wang C Y, Zhang Zand Qiao Z Y 2000 Adv. Mater. 12 1432
[10] Zhao L X, Meng G W, Peng X S, Zhang X Y and Zhang L D 2002 Appl. Phys. A 74 587
[11] Zhang J, Zhang L, Jiang F H and Dai Z H 2004 Chem. Phys.Lett. 383 423
[12] Li Z J, Chen X L, Li H J and Xu Y P 2002 J. Crystal Growth 236 71
[13] Zhao L X, Meng G W, Peng X S, Zhang X Y and Zhang L D 2002 J.Crystal Growth 235 124
[14] Bae S Y, Seo H W, Park J, Yang H, Park J C and Lee S Y 2002 Appl. Phys. Lett. 81 126
[15] Bae S Y, Seo H W, Park J, Yang H and Song S A 2002 Chem.Phys. Lett. 365 525
[16] Li Z J, Chen X L, Li H J, Tu Q Y, Yang Z, Xu Y P and Hu B Q 2001 Appl. Phys. A 72 629
[17] Jian J K, Chen X L, He M, Wang W J, Zhang X N and Shen F 2003 Chem. Phys. Lett. 368 416
[18] Chen X L, Liang J K, Liu Y, Lan Y C, Zhang Y L, Ma Y, Che G C, LiuG D, Xing X Y and Qiao Z Y 1999 J. Appl. Phys. 85 3155
[19] Zhao M, Chen X L, Jian J K, Zhang X N, Zhao H Z and Xu Y P 2005 J. Crystal Growth 283 418 |
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