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Stimulated Raman Scattering in a Weakly Polar III-V Semiconductor: Effect of dc Magnetic Field and Free Carrier Concentration |
| M. Singh1;P. Aghamkar1;P. K. Sen2 |
| 1Department of Applied Physics, Guru Jambheshwar University of Science and Technology, Hisar-125001, India
2Department of Applied Physics, S.G.S. Institute of Technology and Science, 23-Park Road, Indore-452003, India |
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| Cite this article: |
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M. Singh, P. Aghamkar, P. K. Sen 2007 Chin. Phys. Lett. 24 2245-2248 |
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Abstract Using the hydrodynamic model of semiconductor plasmas, we perform an
analytical investigation of stimulated Raman scattering (SRS) of an electromagnetic pump wave in a transversely magnetized weakly polar
semiconductor arising from electron-density perturbations and molecular
vibrations of the medium both produced at the longitudinal optical phonon frequency. Assuming that the origin of SRS lies in the third-order susceptibility of the medium, we investigate the growth rate of Stokes mode. The dependence of stimulated Raman gain on the external dc magnetic field strength and free carrier concentration is reported. The possibility of the occurrence of optical phase conjugation via SRS is also studied. The steady-state Raman gain is found to be greatly enhanced by the presence of the strong external dc magnetic field.
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| Keywords:
42.65.-k
42.65.Ky
42.55.Ye
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Received: 26 January 2007
Published: 25 July 2007
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| PACS: |
42.65.-k
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(Nonlinear optics)
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42.65.Ky
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(Frequency conversion; harmonic generation, including higher-order harmonic generation)
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42.55.Ye
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(Raman lasers)
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