Chin. Phys. Lett.  2007, Vol. 24 Issue (7): 2097-2100    DOI:
Original Articles |
Efficient Top-Emitting Polymer Light-Emitting Diodes Using Chromium as Anode
HUANG Yong;XU Yun-Hua;XU Wei;ZHOU Jian-Gang;PENG Jun-Biao;CAO Yong
Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640Key Laboratory of Specially Functional Materials (Ministry of Education), South China University of Technology, Guangzhou 510640
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HUANG Yong, XU Yun-Hua, XU Wei et al  2007 Chin. Phys. Lett. 24 2097-2100
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Abstract We demonstrate a high efficiency top-emitting polymer light-emitting diode (TPLED) with chromium (Cr) taking as the anode. The TPLED structure is Cr/poly-3, 4-ethylenedioxythiophene (PEDOT:PSS)/poly [2-(4-3',7'-dimethyloctyloxy)-phenyl]-p-phenylenevinylene) (P-PPV)/Ba/Ag. The Cr (100nm) anode is prepared by sputter-depositing in a vacuum chamber. It is found that the device emissive properties are affected dramatically by the thickness of both PEDOT:PSS and the Ag cathode. Optimized thicknesses of PEDOT:PSS and Ag layer are 60nm and 15nm, respectively. The diode exhibits excellent electroluminescence (EL) properties, such as a turn-on voltage of 3.32V, luminous efficiency of 4.41cd/A and luminance of 6989cd/m2 at driving
voltage of about 9V.
Keywords: 78.60.Fi      78.66.Qm      85.60.Jb     
Received: 08 January 2007      Published: 25 June 2007
PACS:  78.60.Fi (Electroluminescence)  
  78.66.Qm  
  85.60.Jb (Light-emitting devices)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I7/02097
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HUANG Yong
XU Yun-Hua
XU Wei
ZHOU Jian-Gang
PENG Jun-Biao
CAO Yong
[1] Tang C W and Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[2] Han S, Feng X, Lu Z H, Johnson D and Wood R 2003 Appl. Phys.Lett. 82 2715
[3] Yang C J, Lin C L, and Wu C C, 2005 Appl. Phys. Lett. 87 143507
[4] Moon D G, Pode R B, C J Lee, and Han J I 2004 Appl. Phys.Lett. 85 4771
[5] Pode R B, Lee C J, Moon D G, and Han J I 2004 App. Phys.Lett. 84 4614
[6] Qin G G, Xu A G, Ma G L, Ran G Z, Qiao Y P, Zhang B R, Chen W X andWu S K 2004 App. Phys. Lett. 85 5406
[7] Peng H J, Sun J X, Zhu X L, Yu X M, Wong M, and Kwok H S 2006 Appl. Phys. Lett. 88 073517
[8] Chen S F, Zhao Y, Cheng G, Li J, Liu C L, Zhao Z Y, Jie H Hand Liu S Y 2006 Appl. Phys. Lett. 88 153517
[9] Dobbertin T, Kroeger M, Heithecker D, Schneider D, Metzdorf D,Neuner H, Becker E, Johannes H H and Kowalsky W 2003 Appl. Phys.Lett. 82 284
[10] Kim H K, Kim D G, Lee K S, Huh M S, Jeong S H, Kim K I, Kim H, HanD W and Kown J H 2004 Appl. Phys. Lett. 85 4295
[11] Kim H K, Kim D G, Lee K S, Huh M S, Jeong S H and Kim K I 2004 Proc. Samsung Tech. Conference (Gigeung, Korea) p 155
[12] Hou L T, Huang F, Zeng W J, Peng J B and Cao Y 2005 Appl. Phys. Lett. 87 153509
[13] Chong L W, Lee Y L and Wen T C 2006 Appl. Phys. Lett. 89 233513
[14] Mo Y Q, Huang J, Jiang J X, Deng X Y, Niu Y H and Cao Y 2002 Chin. J. Polym. Sci. 20 461
[15] Wilson R J and Mills A J 1983 Surf. Sci. 128 70
[16] Choi H W, Kim S Y, Kim K B, Tak Y H and Lee J L 2005 Appl. Phys. Lett. 86 012104
[17] Lin C L, Lin H W, and Wu C C 2005 Appl. Phys. Lett. 87 021101
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