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High Field Electrical Conduction in Pre-Formed Al--ZnS--Al Thin Films in Metal--Insulator--Metal Devices |
| M. Y. Nadee;Nadeem Iqbal;M. F. Wasiq;A. U. Khosa |
| Department of Physics, Bahauddin Zakariya University Multan, Pakistan |
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| Cite this article: |
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M. Y. Nadee, Nadeem Iqbal, M. F. Wasiq et al 2007 Chin. Phys. Lett. 24 2068-2069 |
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Abstract The high field electrical conduction mechanism for the widely used ZnS thin films in the microelectronic industry is investigated. Experimental data on the dc conduction as a function of the applied bias for the Al--ZnS--Al devices is carefully compared with the theoretical equations given by Schottky and Poole--Frenkel. The results yield the value of the coefficient of the barrier lowering ?compatible with the Schottky theory rather than the Poole--Frenkel theory, which are also in agreement with the results reported earlier by Maekawa [Phys. Rev. Lett. 24 (1970) 1175]
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| Keywords:
73.50.Fq
71.30.+h
73.40.Rw
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Received: 23 November 2006
Published: 25 June 2007
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| PACS: |
73.50.Fq
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(High-field and nonlinear effects)
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71.30.+h
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(Metal-insulator transitions and other electronic transitions)
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73.40.Rw
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(Metal-insulator-metal structures)
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