| Original Articles |
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Ionizing Dose Effect of Thermal Oxides Implanted with Si+ Ions |
| CHEN Ming 1,2;LUO Hong-Wei 3;ZHANG Zheng-Xuan1;ZHANG En-Xia1;YANG Hui 1,2;TIAN Hao 1,2;WANG Ru 1,2;YU Wen-Jie 1,2 |
| 1Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 1000393CEPREI, Guangzhou 510610 |
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| Cite this article: |
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CHEN Ming, LUO Hong-Wei, ZHANG Zheng-Xuan et al 2007 Chin. Phys. Lett. 24 1775-1777 |
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Abstract Total ionizing dose effects of Si+ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photoluminescence (PL) method is engaged to investigate nanostructures of samples. Ar+ implanted samples are also studied by the same way to provide a comparison. The results show that Si+ implantation following with high temperature annealing can significantly reduce the radiation induced flatband shift, which is caused by net positive charge accumulation in oxides. This reduction is attributed to the formation of Si nanoscale structures. Ar+ implantation is also found to reduce the radiation induced flatband shift, while it is different that the reduction with Si+ implantation shows little dependence on implant dose of Ar+ ions. This is explained by possible increase of recombination centres.
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| Keywords:
87.50.Gi
78.55.-m
78.67.Bf
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Received: 05 December 2006
Published: 17 May 2007
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| PACS: |
87.50.Gi
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78.55.-m
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(Photoluminescence, properties and materials)
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78.67.Bf
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(Nanocrystals, nanoparticles, and nanoclusters)
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[1] Ma T P and Dressendorfer P V 1989 Ionizing Radiation Effectsin MOS Devices and Circuits (New York: Wiley) p 2
[2] Claeys C and Simoen E 2002 Radiation Effects in AdvancedSemiconductor Materials and Devices (Heidelberg: Springer) p 6
[3] Hughes H and Benedetto J 2003 IEEE Trans. Nucl. Sci. 50 500
[4] Mrstik B J et al 2000 IEEE Trans. Nucl. Sci. 47 2189
[5] Mrstik B J et al 2001 Microelectron. Engin. 59 285
[6] Mrstik B J et al 2003 IEEE Trans. Nucl. Sci. 50 1947
[7] Iwayama T S, Hole D E and Boydn I W 2000 Microelectron.Reliab. 40 849
[8] Ziegler J F and Biersack J P 2003 SRIM2003-The Stopping andRange of Ions in Matter version 2003.23 code available atwww.srim.org
[9] Taniguchi K, Tanaka M and Hamaguchi C 1990 J. Appl.Phys. 67 2195
[10] Mrstik M J et al 1999 J. Appl. Phys. 85 6577
[11] Saks N S, Dosier C M and Brown D B IEEE Trans. Nucl.Sci. 35 1168
[12] Takahashi M, Sakakibara Y and Ohno T 1998 J.Electrochem. Soc. 145 1795 |
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