Effects of Ag on Electrical Properties of Ag/Ni/p-GaN Ohmic Contact

Chin. Phys. Lett.

2007, Vol. 24

Issue (6): 1741-1744 DOI:

Original Articles

Effects of Ag on Electrical Properties of Ag/Ni/p-GaN Ohmic Contact

ZHAO De-Sheng;ZHANG Shu-Ming; DUAN Li-Hong;WANG Yu-Tian;JIANG De-Sheng;LIU Wen-Bao;ZHANG Bao-Shun;YANG Hui

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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ZHAO De-Sheng, ZHANG Shu-Ming, DUAN Li-Hong et al 2007 Chin. Phys. Lett. 24 1741-1744

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Abstract Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5×10^-4Ωcm² is obtained at annealing temperature of 550°C.

Keywords: 81.05.Ea 73.40.-c 61.10.Nz

Received: 13 January 2007 Published: 17 May 2007

PACS:	81.05.Ea	(III-V semiconductors)
	73.40.-c	(Electronic transport in interface structures)
	61.10.Nz

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2007/V24/I6/01741

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	ZHAO De-Sheng
	ZHANG Shu-Ming
	DUAN Li-Hong
	WANG Yu-Tian
	JIANG De-Sheng
	LIU Wen-Bao
	ZHANG Bao-Shun
	YANG Hui

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