| Original Articles |
|
|
|
|
High-Reflectivity AlGaN/AlN Distributed Bragg Reflector in Ultraviolet Region |
| JI Xiao-Li 1,2;JIANG Ruo-Lian 1,2;XIE Zi-Li 1,2;LIU Bin 1,2;ZHOU Jian-Jun 1,2;LI Liang 1,2;HAN Ping 1,2;ZHANG Rong 1,2;ZHENG You-Dou 1,2;GONG Hai-Mei3 |
| 1Department of Physics, Nanjing University, Nanjing 2100932Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 2100933Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 |
|
| Cite this article: |
|
JI Xiao-Li, JIANG Ruo-Lian, XIE Zi-Li et al 2007 Chin. Phys. Lett. 24 1735-1737 |
|
|
|
|
Abstract Thirty-pair Al0.3 Ga 0.7 N/AlN distributed Bragg reflectors centred at 320nm are designed and grown on sapphire substrates by metalorganic chemical vapour deposition. No cracks are observed in the main area of the 2-inch wafer except for about 4mm margin under an optical microscope. Regular stack of alternating layers is shown by scanning electron microscopy. Clear two-dimensional growth steps and very low surface roughness are shown by atomic force microscopy (AFM). Well-defined periodicity is shown by high resolution x-ray diffraction. High reflectivity of 93% at 313nm with a bandwidth of 13nm is obtained.
|
| Keywords:
78.66.Fd
81.15.Gh
68.55.-a
|
|
|
Received: 25 December 2006
Published: 17 May 2007
|
|
| PACS: |
78.66.Fd
|
(III-V semiconductors)
|
| |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
| |
68.55.-a
|
(Thin film structure and morphology)
|
|
|
|
|
|
[1] Kishino K et al 1991 IEEE J. Quantum Electron. 27 2025
[2] Pan Z et al 2001 Chin. Phys. Lett. 18 1249
[3] Khan M A et al 1991 Appl. Phys. Lett. 59 1449
[4] Ng H M et al 1999 Appl. Phys. Lett. 74 1036
[5] Langer F et al 1999 Appl. Phys. Lett. 74 3610
[6] Ng H M, Moustakas T D and Chu S N G 2000 Appl. Phys. Lett. 76 2818
[7] Waldrip K E et al 2001 Appl. Phys. Lett. 78 3205
[8] Fern$\acute\al$ndez S et al 2001 Appl. Phys. Lett. 79 2136
[9] Fern$\acute\al$ndez S et al 2001 Semicond. Sci. Technol. 16 913
[10] Schenk H P D et al 2001 Phys. Status Solidi A 188 899
[11] Schenk H P D et al 2002 Appl. Phys. Lett. 80 174
[12] Natali F et al 2003 Appl. Phys. Lett. 82 499
[13] Carlin J F et al 2005 Phys. Status Solidi B 242 2326
[14] Semond F et al 2001 Phys. Status Solidi A 183 163
[15] Kipshidze G et al 2001 Phys. Status Solidi A 188 881
[16] Fedler F et al 2002 Phys. Status Solidi C 0 258
[17] Klausing K et al 2002 Phys. Status Solidi A 194 428
[18] Wang T et al 2004 Appl. Phys. Lett. 85 43
[19] Feltin E et al 2006 Appl. Phys. Lett. 88 051108
[20] Mitrofanov O et al 2006 Appl. Phys. Lett. 88 171101
[21] Brunner D et al 1997 J. Appl. Phys. 82 5090
[22] Azzam R M A and Bashara N M 1977 Ellipsometry and PolarizedLight (Amsterdam: North-Holland)
[23] Amano H et al 1986 Appl. Phys. Lett. 48 353 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
