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Evolution of Photocurrent during Coadsorption of Cs and O on GaAs (100) |
ZOU Ji-Jun 1,2;CHANG Ben-Kang1;YANG Zhi1;DU Xiao-Qing1;GAO Pin
1;QIAO Jian-Liang1 |
| 1Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 2100942Department of Electronic Engineering, East China Institute of Technology, Fuzhou 344000 |
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| Cite this article: |
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ZOU Ji-Jun, CHANG Ben-Kang, YANG Zhi et al 2007 Chin. Phys. Lett. 24 1731-1734 |
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Abstract The photocurrent and spectral response characteristics of gallium arsenide (GaAs) are obtained by a multi-information measurement system, and the evolution of the photocurrent versus the Cs:O flux ratio is investigated. The experimental results show that the photocurrent increases approximately exponentially after the first exposure to Cs until a maximum sensitivity is reached, the detailed evolution process and the ultimate photocurrent are different for different samples. These differences are analysed, and according to the process of coadsorption of Cs and oxygen on GaAs, an equation is presented to explain the increase of photocurrent.
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| Keywords:
78.66.Fd
79.60.Dp
68.43.De
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Received: 11 December 2006
Published: 17 May 2007
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| PACS: |
78.66.Fd
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(III-V semiconductors)
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79.60.Dp
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(Adsorbed layers and thin films)
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68.43.De
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(Statistical mechanics of adsorbates)
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