Chin. Phys. Lett.  2007, Vol. 24 Issue (6): 1664-1667    DOI:
Original Articles |
Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator
ZHAO Yi-Hua;DONG Gui-Fang;WANG Li-Duo;QIU Yong
Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084
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ZHAO Yi-Hua, DONG Gui-Fang, WANG Li-Duo et al  2007 Chin. Phys. Lett. 24 1664-1667
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Abstract We employ the Ta2O5/PVP (poly-4-vinylphenol) double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta2O5 insulator layers, the device with the Ta2O5/PVP double-layer insulator exhibits an enhancement
of the field-effect mobility from 0.21 to 0.54cm2/Vs, and the decreasing threshold voltage from 4.38V to -2.5V. The results suggest that the Ta2O5/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.
Keywords: 61.82.Fk      61.82.Ms      61.82.Pv     
Received: 27 November 2006      Published: 17 May 2007
PACS:  61.82.Fk (Semiconductors)  
  61.82.Ms (Insulators)  
  61.82.Pv (Polymers, organic compounds)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I6/01664
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ZHAO Yi-Hua
DONG Gui-Fang
WANG Li-Duo
QIU Yong
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