Chin. Phys. Lett.  2007, Vol. 24 Issue (6): 1649-2652    DOI:
Original Articles |
Microstructure of Epitaxial Er2O3 Thin Film on Oxidized Si (111) Substrate
XUE Xian-Ying1;WANG Yu-Zhu1;JIA Quan-Jie1;WANG Yong1;CHEN Yu1;JIANG Xiao-Ming1;ZHU Yan-Yan2;JIANG Zui-Min2
1Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 1000492Surface Physics Laboratory, Fudan University, Shanghai 200433
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XUE Xian-Ying, WANG Yu-Zhu, JIA Quan-Jie et al  2007 Chin. Phys. Lett. 24 1649-2652
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Abstract Er2O3 thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction (GIXRD), atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er2O3 thin film is a mosaic of single-crystal
domains. The interplanar spacing d in-plane residual strain tensor ε| and the strain relaxation degree ξ are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulk
Er2O3. In-plane strains in three sets of planes, i.e. (440), (404), and (044), are isotropic.
Keywords: 61.10.Nz      68.55.-a      68.55.Jk      61.10.Kw     
Received: 29 January 2007      Published: 17 May 2007
PACS:  61.10.Nz  
  68.55.-a (Thin film structure and morphology)  
  68.55.Jk  
  61.10.Kw  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I6/01649
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XUE Xian-Ying
WANG Yu-Zhu
JIA Quan-Jie
WANG Yong
CHEN Yu
JIANG Xiao-Ming
ZHU Yan-Yan
JIANG Zui-Min
[1] Cho M H, Roh Y S and Whang C N 2002 Appl. Phys. Lett. 81 472
[2] Osten H J, Liu J P and Gaworzewski P 2000 Technical Digest, International Electron Devices Meeting p 653
[3] Robertson J 2000 J. Vac. Sci. Technol. B 18 1785
[4] Xu R, Zhu Y Y and Chen S 2005 J. Cryst. Growth 277 496
[5] Kaul V K and Saxena U 1977 Acta Cryst. A 33 992
[6] Queralt X, Ferrater C and S\'anchez F 1995 Appl. Surf. Sci. 86 95
[7] Kennou S, Ladas S and Grimaldi M G 1996 Appl. Surf. Sci. 102 142
[8] Ono H and Katsumata T 2001 Appl. Phys. Lett. 78 1832
[9] Mikhelashvili V, Eisenstein G and Edelman F 2001 J. Appl.Phys. 90 5447
[10] Mikhelasvili V, Eisenstein G and Edelman F 2002 Appl. Phys.Lett. 80 2156
[11] Mikhelasvili V, Eisenstein G and Edelman F 2004 J. Appl.Phys. 95 613
[12] P\"aiv\"asaari J, Niinist?J and Arstila K 2005 Chem. Vap.Deposition 11 415
[13] Singh M P, Thakur C S and Shalini K 2003 Appl. Phys. Lett. 83 2889
[14] Zhu Y Y, Xu R and Chen S 2006 Thin Solid Films 508 86
[15] Shalini K and Shivashankar S A 2005 Bull. Mater. Sci. 28 49
[16] Wang J, Neaton J B and Zheng H 2003 Science 299 1719
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