Chin. Phys. Lett.  2007, Vol. 24 Issue (5): 1397-1399    DOI:
Original Articles |
Photoinduced Resistance Change in an Oxygen-Deficient La 0.9 Sr 0.1 MnO 3-δ Thin Film
YAN Zi-Jie1;YUAN Xiao1;GAO Guo-Mian2;LUO Bing-Cheng2;JIN Ke-Xin2;CHEN Chang-Le2
1School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 2Department of Applied Physics, Northwestern Polytechnical University, Xi'an 710072
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YAN Zi-Jie, YUAN Xiao, GAO Guo-Mian et al  2007 Chin. Phys. Lett. 24 1397-1399
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Abstract Photoinduced resistance change (△R/R) in an oxygen-deficient La0.9Sr0.1MnO3-δ thin film is studied. At room temperature, the resistance change of about 30% and response time of about 75ns are observed under the illumination with a 532nm laser pulse of 7ns and light power of 750mW. It is also found that △R/R changes with the light power. The phenomena are explained in terms of the photoinduced hole carriers and localized insulator-to-metal transition, which may have potential applications in optoelectronic
devices.
Keywords: 81.40.Tv      75.47.Lx      75.90.+w     
Received: 21 December 2006      Published: 23 April 2007
PACS:  81.40.Tv (Optical and dielectric properties related to treatment conditions)  
  75.47.Lx (Magnetic oxides)  
  75.90.+w (Other topics in magnetic properties and materials)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I5/01397
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YAN Zi-Jie
YUAN Xiao
GAO Guo-Mian
LUO Bing-Cheng
JIN Ke-Xin
CHEN Chang-Le
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