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A Flip-Chip AlGaInP LED with GaN/Sapphire Transparent Substrate Fabricated by Direct Wafer Bonding |
| LIANG Ting;GUO Xia;GUAN Bao-Lu;GUO Jing;GU Xiao-Ling;LIN Qiao-Ming;SHEN Guang-Di |
| Beijing Optoelectronic Technology Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022 |
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| Cite this article: |
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LIANG Ting, GUO Xia, GUAN Bao-Lu et al 2007 Chin. Phys. Lett. 24 1110-1113 |
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Abstract A red-light AlGaInP light emitting diode (LED) is fabricated by using direct wafer bonding technology. Taking N-GaN wafer as the transparent substrate, the red-light LED is flip-chiped onto a structured silicon submount. Electronic luminance (EL) test reveals that the luminance flux is 130% higher than that of the conventional LED made from the same LED wafer. Current--voltage (I--V) measurement indicates that the bonding processes do not impact the electrical property of AlGaInP LED in the small voltage region (V<1.5V). In the large voltage region (V>1.5V), the I--V characteristic exhibits space-charge-limited currents characteristic due to the p-GaAs/n-GaN bonding interface.
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| Keywords:
85.60.Jb
71.55.Eq
51.50.+v
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Received: 13 December 2006
Published: 26 March 2007
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