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Spectral Hole-Burning of Eu3+ :Y2SiO5 Crystal at 16K |
| XUE Shao-Lin1;YU Mu-Huo1;CHEN Ling-Bing2;ZHAO You-Yuan2;LI Fu-Ming2;ZHANG Shou-Du3;WANG Hao-Bing3 |
| 1College of Sciences and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, Shanghai 2000512State Key Joint Lab for Material Modification by Triple Beams, Department of Optics, Fudan University, Shanghai 2004333Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 |
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| Cite this article: |
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XUE Shao-Lin, YU Mu-Huo, CHEN Ling-Bing et al 2007 Chin. Phys. Lett. 24 1080-1083 |
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Abstract By using an Ar+ ion laser, a tunable Rh 6G dye laser (linewidth 0.5cm-1) pumped by the second harmonic of a YAG:Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu3+-doped Y2SiO 5 crystal. Persistent spectral hole burning (PSHB) are observed in the Eu 3+ ions spectral lines (5D0- 7F0 transition)
in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1s spectral holes with hole width about 80MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.
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| Keywords:
78.55.-m
78.20.-e
42.70.Ln
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Received: 10 November 2006
Published: 26 March 2007
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| PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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42.70.Ln
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(Holographic recording materials; optical storage media)
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[1] Mitsunaga M, Yano R and Uesugi N 1991 Opt. Lett. 16 1890
[2] Brandle C D, Valentino A J and Berkstresser G W 1986 J. Cryst.Growth 79 308
[3] Joint Committee on Power Diffraction Standards 1989 YttriumSilicate, Power Diffraction File (Inorganic Phases) (Washington DC:National Standard Bureau) Card No 36--1476
[4] Li C, Wyon Ch and Moncorge R 1992 IEEE J. QuantumElectron. 28 1209 |
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