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Extremely Low Density InAs Quantum Dots with No Wetting Layer |
| HUANG She-Song;NIU Zhi-Chuan;NI Hai-Qiao;ZHAN Feng;ZHAO Huan;SUN Zheng;XIA Jian-Bai |
| State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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HUANG She-Song, NIU Zhi-Chuan, NI Hai-Qiao et al 2007 Chin. Phys. Lett. 24 1025-1028 |
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Abstract Extremely low density InAs quantum dots (QDs) are grown by molecular
beam droplet epitaxy. The gallium deposition amount is optimized to
saturate exactly the excess arsenic atoms present on the GaAs substrate
surface during growth, and low density InAs/GaAs QDs (4×106cm -2) are formed by depositing 0.65 monolayers (MLs) of indium. This is much less than the critical deposition thickness (1.7ML), which is necessary to form InAs/GaAs QDs with the conventional Stranski--Krastanov growth mode. The narrow
photoluminescence linewidth of about 24meV is insensitive to cryostat
temperatures from 10K to 250K. All measurements indicate that there is
no wetting layer connecting the QDs.
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| Keywords:
68.35.Fx
68.37.Ps
78.67.Hc
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Received: 31 October 2006
Published: 26 March 2007
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