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Growth and Characterization of InN Thin Films on Sapphire by MOCVD |
| XIE Zi-Li;ZHANG Rong;XIU Xiang-Qian;LIU Bin;LI Liang;HAN Ping;GU Shu-Lin;SHI Yi;ZHENG You-Dou |
| Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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XIE Zi-Li, ZHANG Rong, XIU Xiang-Qian et al 2007 Chin. Phys. Lett. 24 1004-1006 |
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Abstract Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition (MOCVD). By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, hotoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939cm2/Vs,
and 3.9×1018cm-3, respectively.
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| Keywords:
61.10.Nz
81.15.Hi
78.55.Cr
68.55.Jk
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Received: 16 December 2006
Published: 26 March 2007
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