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Effect of Bias on Content of GeC in Ge 1-x Cx Films |
| ZHAN Chang-Yong;WANG Li-Wu;HUANG Ning-Kang |
| Key Laboratory of Radiation and Technology of Education Ministry, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064 |
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| Cite this article: |
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ZHAN Chang-Yong, WANG Li-Wu, HUANG Ning-Kang 2007 Chin. Phys. Lett. 24 803-806 |
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Abstract Ge 1-x Cx films with GeC content up to 11.6% can be prepared by using a medium frequency magnetron sputtering technique in our study. X-ray photoelectron analysis for these Ge 1-x Cx films shows that the Ge 1-x Cx films consist of C, Ge, GeC and GeOy. The content of GeC increases from 10.7% at 0V to 11.6% at 250V, and decreases to 9.6% at 350V, and then increases again to 10.4% at 450V. The Raman analysis confirms the result of XPS for checking GeC in the deposited Ge 1-x Cx films. The related mechanism is discussed.
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| Keywords:
68.55.Nq
85.40.Sz
33.60.Fy
87.64.Je
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Received: 12 October 2006
Published: 08 February 2007
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[1] Sahnouna M, Khenata R et al 2005 Physica B 355 392
[2]Okinaka M, Miyatake K et al 2003 J. Crystal Growth 258251
[3] Biederman H, Stundzia V et al 1999 Thin Solid Films 351 151
[4] Szmidt J, Gazicki-Lipman M et al 2003 Thin Solid Films 441 192
[5] Hu C Q, Zheng W T et al 2004 Vacuum 77 63
[6] Vilcarromero J, Marques F C and Andreu J 1998 J.Non-Crystalline Solids 227--230 427
[7] Okinaka M, Hamana Y et al 2003 Physica E 16 473
[8] Huang J Y, Ye Z Z, Lu H M et al 1998 Chin. Phys. Lett. 15 692 |
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