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Geometry Parameter Optimization of Large Cross-Sectional S-Shaped Bent Rib Waveguides for Silicon Based Optical Switches |
| LI Zhi-Yong;LIU Jing-Wei;YU Jin-Zhong |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing |
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| Cite this article: |
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LI Zhi-Yong, LIU Jing-Wei, YU Jin-Zhong 2007 Chin. Phys. Lett. 24 744-746 |
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Abstract By using a genetic algorithm, geometry parameters of large cross-sectional S-bend rib waveguides are optimized aiming at the least total loss when the propagation loss is considered. Optimized results are presented as an example of S-bend rib waveguides based on silicon-on-insulator (SOI) 4×4 optical switches. The value of 2dB/cm is given to the propagation loss according to the experimental results. The simulation results indicate that the total loss drops from 1.0002dB down to 0.4375dB without considering a lateral offset. If the offset is adopted, the total loss reduces from 0.5463dB to 0.2365dB. In addition, the effect of the rib height ratio on the loss is analysed, and the optimal ratio is obtained to be 0.55.
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| Keywords:
42.82.Et
42.82.Ds
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Received: 23 November 2006
Published: 08 February 2007
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| PACS: |
42.82.Et
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(Waveguides, couplers, and arrays)
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42.82.Ds
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(Interconnects, including holographic interconnects)
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[1] Lang T, He J and He S 2006 IEEE Photon. Technol. Lett. 18 232
[2] Li Y, Yu J and Chen S 2005 Chin. Phys. Lett. 221449
[3] Sun F, Yu J and Chen S 2005 Chin. Phys. Lett. 22 3097
[4] Soref R, Schmidtchen J and Petermann K 1991 IEEE J. QuantumElectron. 27 1971
[5] Wang X et al %, Yan Q, Liu J, Chen S and Yu J2003 Chin. J. Semicond. 24 1025
[6] Subramaniam V et al %, Brabander G, Naghski D and Boyd J1997 J. Lightwave Technol. 15 990
[7] Wei H et al %, Yu J, Zhang X, Liu Z and Wang Q2001 J. Infrared Millim. Waves 20 398
[8] Zhao C and Gao Y 1997 Semiconductor Material and WaveguidesBased on Silicon (Beijing: Publishing House of Electronics Industry) p 232 |
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