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Theoretical Study of Photoabsorption Spectra near Si 2p Edges of Silanes: to Determine Orientations of Adsorbed Silanes |
| ZHANG Wei-Hua1;LI Jia-Ming 1,2 |
| 1 Key Laboratory of Atomic and Molecular Nanosciences of Education Ministry, Department of Physics, Tsinghua University, Beijing 1000842Department of Physics, Shanghai Key Laboratory for Laser Fabrication and Material Science, Shanghai Jiaotong University, Shanghai 200030 |
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| Cite this article: |
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ZHANG Wei-Hua, LI Jia-Ming 2007 Chin. Phys. Lett. 24 687-690 |
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Abstract In the frame work of quantum defect theory, photoabsorption spectra near
Si 2p edges of silane have been studied. When silanes are adsorbed on a physical surface and excited by polarized x-ray photons, relative intensities of the spectra will be different from that of free molecules. Such features can be used to determine orientations of adsorbed silanes based on selection rules.
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| Keywords:
33.15.Bh
33.20.Ni
33.70.Ca
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Received: 20 October 2006
Published: 08 February 2007
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| PACS: |
33.15.Bh
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(General molecular conformation and symmetry; stereochemistry)
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33.20.Ni
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(Vacuum ultraviolet spectra)
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33.70.Ca
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(Oscillator and band strengths, lifetimes, transition moments, and Franck-Condon factors)
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