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Effects of Substrate Temperature and Nitrogen Pressure on Growth of AlN Films by Pulsed Laser Deposition |
| LV Lei;LI Qing-Shan;LI Li;ZHANG Li-Chun; WANG Cai-Feng;QI Hong-Xia |
| Department of Physics, Qufu Normal University, Shandong 273165 |
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| Cite this article: |
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LV Lei, LI Qing-Shan, LI Li et al 2007 Chin. Phys. Lett. 24 552-554 |
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Abstract Highly oriented aluminium nitride (AlN) films are grown on p-Si (100) substrates by pulsed laser deposition, and their characteristics of structure and composition are studied by x-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. The results show that the deposited films exhibit good crystalline properties with a sharp x-ray diffraction peak at 2θ=33.15°corresponding to AlN h<100> crystalline orientation. The influences of substrate temperature and ambient nitrogen (N2) pressure on the crystallinity of AlN films are remarkable. At room temperature, when the ambient N2 pressure arises from 5×10-6 Pa to 5Pa, the crystallinity of the film becomes better. When the substrate temperature is 600°C, the film has the best crystallinity at 0.05Pa. Furthermore, the effects of substrate temperature and ambient N2 pressure on the combination of Al-N bonds and surface morphology of AlN films are also studied.
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| Keywords:
81.05.Ea
81.15.Fg
68.55.Jk
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Received: 25 August 2006
Published: 24 February 2007
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