Chin. Phys. Lett.  2007, Vol. 24 Issue (2): 549-551    DOI:
Original Articles |
Effects of Proton Irradiation on a CMOS Image Sensor
HUANG Qiang;MENG Xiang-Ti
Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084
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HUANG Qiang, MENG Xiang-Ti 2007 Chin. Phys. Lett. 24 549-551
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Abstract We perform 9MeV proton irradiation of a complementary metal oxide semiconductor (CMOS) image sensor at doses from 1×109 to 4×1010 cm-2. In general, the average brightness of dark output images increases with an increasing dose, and reaches the maximum at 1×1010 cm -2. The captured
colour images become very blurry at 4×1010 cm-2. These can be explained by change of concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation programme with dose.
Keywords: 78.70.-g      78.90.+t      85.40.Qx     
Received: 30 October 2006      Published: 24 February 2007
PACS:  78.70.-g (Interactions of particles and radiation with matter)  
  78.90.+t (Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter)  
  85.40.Qx (Microcircuit quality, noise, performance, and failure analysis)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I2/0549
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Articles by authors
HUANG Qiang
MENG Xiang-Ti
[1] Eid E S, Chan T Y, Fossum E R, Tsai R H, Spagnuolo R, Deily J,Byers W B and Peden J C 2001 IEEE Trans. Nucl. Sci. 48 1796
[2] Bogaerts J, Dierickx B and Mertens R 2002 IEEE Trans. Nucl.Sci. 49 1513
[3] Meng X T and Kang A G 2001 Proc. Chin. Nucl. Soc. Conf. 671(in Chinese)
[4] Meng X T and Kang A G 2002 Rare Metals 21 79
[5] Meng X T, Kang A G and You Z 2002 Jpn. J. Appl. Phys. I$\!$I41 L919
[6] Meng X T, Kang A G, Wang X Y and You Z 2003 Semicond. Sci.Technol. 18 L1
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