| Original Articles |
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A Comparison between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors |
| HU Wei-Guo1;LIU Xiang-Lin1;ZHANG Pan-Feng1;ZHAO Feng-Ai1;JIAO Chun-Mei1;WEI Hong-Yuan1;ZHANG Ri-Qing1;WU Jie-Jun1;CONG Guang-Wei1;PAN Yi2 |
| 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Chemistry, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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HU Wei-Guo, LIU Xiang-Lin, ZHANG Pan-Feng et al 2007 Chin. Phys. Lett. 24 516-517 |
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Abstract Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Ω scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002) AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4nm, and grown with TMA is 69.4nm. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.
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| Keywords:
68.55.-a
81.15.Kk
81.05.Ea
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Received: 26 September 2006
Published: 24 February 2007
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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81.15.Kk
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(Vapor phase epitaxy; growth from vapor phase)
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81.05.Ea
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(III-V semiconductors)
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