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Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs |
| MU Sen;YU Tong-Jun;HUANG Liu-Bing;JIA Chuan-Yu;PAN Yao-Bo;YANG Zhi-Jian;CHEN Zhi-Zhong;QIN Zhi-Xin; ZHANG Guo-Yi |
| State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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MU Sen, YU Tong-Jun, HUANG Liu-Bing et al 2007 Chin. Phys. Lett. 24 3245-3248 |
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Abstract Electrical characteristics of In0.05Ga0.95N/Al0.07Ga0.93N and In0.05Ga0.95N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400nm wavelength are measured. It is found that for InGaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the Al0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic of p-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.
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| Keywords:
73.61.Ey
85.35.Be
85.60.Jb
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Received: 25 July 2007
Published: 23 October 2007
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| PACS: |
73.61.Ey
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(III-V semiconductors)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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85.60.Jb
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(Light-emitting devices)
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