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Room-Temperature Ferromagnetism of Co-Doped CeO2 Thin Films on Si(111) substrates |
| SONG Yuan-Qiang1;ZHANG Huai-Wu1;WEN Qi-Ye1;LI Yuan-Xun1;John Q. Xiao2 |
| 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
2Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA |
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| Cite this article: |
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SONG Yuan-Qiang, ZHANG Huai-Wu, WEN Qi-Ye et al 2007 Chin. Phys. Lett. 24 218-221 |
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Abstract Using Co2O3 as the Co source, doped cerium oxide thin films with the composition of Ce0.97Co0.03O2-δ (CCO) are deposited on Si(111) and glass substrates by pulse laser deposition technique. X-ray diffraction reveals that CCO films with (111) preferential orientation are grown on Si, while the film on glass is polycrystalline with nanocrystal. X-ray photoelectron spectroscopy shows that the Co displaces the Ce atom and exists in high spin state rather than low spin state, which contributes to the room-temperature ferromagnetism confirmed by vibration sample magnetometer. Films on Si and glass are different in ferromagnetism, which is believed to be induced by different film microstructures. Based on these results, the possible ferromagnetism in this insulating film is discussed. Anyway, successful fabrication of CCO films with room-temperature ferromagnetism on Si substrates is of great importance in both technological and theoretical aspects.
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| Keywords:
75.50.Pp
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Published: 01 January 2007
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| PACS: |
75.50.Pp
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(Magnetic semiconductors)
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