| Original Articles |
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Diode End-Pumped Passively Q-Switched Nd3+:GdVO4 Self-Raman Laser at 1176nm |
| WANG Bao-Shan1,2;PENG Ji-Ying1,2;MIAO Jie-Guang1,2;LI Yi-Min1,2;HAO Er-Juan1,2;ZHNG Zhe1,2;GAO Lan-Lan1,2;TAN Hui-Ming1 |
| 1Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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| Cite this article: |
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WANG Bao-Shan, PENG Ji-Ying, MIAO Jie-Guang et al 2007 Chin. Phys. Lett. 24 112-114 |
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Abstract A compact diode-end-pumped passively Q-switched Nd3+:GdVO4/Cr4+:YAG self-Raman laser at 1176nm is demonstrated. When the T0=80% Cr4+:YAG saturable absorber is inserted into the cavity, the maximum Raman laser output reaches 175mW with 3.8W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8,ns, and 38.5kHz, respectively. There is trong blue emission (about 350--400nm) can be observed in the d3+:GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the d3+ ions.
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| Keywords:
42.55.Xi
42.60.Gd
42.55.Ye
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Published: 01 January 2007
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