Influence of Positive Bias on Electrical Properties of Undoped Nanocrystalline Diamond Films

Chin. Phys. Lett.

2006, Vol. 23

Issue (9): 2595-2597 DOI:

Original Articles

Influence of Positive Bias on Electrical Properties of Undoped Nanocrystalline Diamond Films

WU Nan-Chun^1,2;XIA Yi-Ben¹;TAN Shou-Hong²;WANG Lin-Jun¹;LIU Jian-Min¹;SU Qing-Feng¹

¹School of Materials Science and Engineering, Shanghai University, Shanghai 200072 ²Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050

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WU Nan-Chun, XIA Yi-Ben, TAN Shou-Hong et al 2006 Chin. Phys. Lett. 23 2595-2597

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Abstract By means of electron assisted hot filament chemical vapour deposition technology, nanocrystalline diamond films are deposited on polished n-(100)Si wafer surface at 1kPa gas pressure. The deposited films are characterized with a Raman spectrometer, atomic force microscope, semiconductor characterization system and Hall effect measurement system. The results show that, when bias current is larger than 2A, sheet hole concentration can increase to a value greater than 10¹³cm^-2 and undoped nanocrystalline diamond films with a p-type semiconducting characteristic form. Heterojunction between n-Si substrate and the nanocrystalline diamond films deposited with 2A and 6A bias current has an evident junction effect. Hole formation mechanisms in the films are discussed.

Keywords: 81.05.Uw 81.15.Gh

Published: 01 September 2006

PACS:	81.05.Uw
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I9/02595

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	WU Nan-Chun
	XIA Yi-Ben
	TAN Shou-Hong
	WANG Lin-Jun
	LIU Jian-Min
	SU Qing-Feng

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