Chin. Phys. Lett.  2006, Vol. 23 Issue (9): 2579-2582    DOI:
Original Articles |
Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing
ZHAO Huan;XU Ying-Qiang;NI Hai-Qiao;HAN Qin;WU Rong-Han;NIU Zhi-Chuan
State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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ZHAO Huan, XU Ying-Qiang, NI Hai-Qiao et al  2006 Chin. Phys. Lett. 23 2579-2582
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Abstract We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering processes may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.
Keywords: 78.67.De      78.55.Cr      61.72.Cc     
Published: 01 September 2006
PACS:  78.67.De (Quantum wells)  
  78.55.Cr (III-V semiconductors)  
  61.72.Cc (Kinetics of defect formation and annealing)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I9/02579
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ZHAO Huan
XU Ying-Qiang
NI Hai-Qiao
HAN Qin
WU Rong-Han
NIU Zhi-Chuan
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