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Effect of Nonradiative Recombination on Carrier Dynamics in GaInNAs/GaAs Quantum Wells |
| SUN Zheng;WANG Bao-Rui;XU Zhong-Ying;SUN Bao-Quan;JI Yang;NI Hai-Qiao;NIU Zhi-Chuan |
| State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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SUN Zheng, WANG Bao-Rui, XU Zhong-Ying et al 2006 Chin. Phys. Lett. 23 2566-2569 |
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Abstract The nonradiative recombination effect on carrier dynamics in GaInNAs/GaAs quantum wells is studied by time-resolved photoluminescence (TRPL) and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation ntensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.
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| Keywords:
78.47.+p
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Published: 01 September 2006
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