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Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method |
| ZHU Li-Na;CHEN Xiao-Long;YANG Hui;PENG Tong-Hua;NI Dai-Qin;HU Bo-Qing |
| Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
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| Cite this article: |
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ZHU Li-Na, CHEN Xiao-Long, YANG Hui et al 2006 Chin. Phys. Lett. 23 2273-2276 |
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Abstract We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.
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| Keywords:
81.10.Bk
81.40.z
61.72.Cc
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Published: 01 August 2006
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