| Original Articles |
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Continuous Wave Performance and Tunability of MBE Grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers |
| ZHANG Yong-Gang;ZHENG Yan-Lan;LIN Chun;LI Ai-Zhen;LIU Sheng |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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ZHANG Yong-Gang, ZHENG Yan-Lan, LIN Chun et al 2006 Chin. Phys. Lett. 23 2262-2265 |
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Abstract InGaAsSb/AlGaAsSb multi quantum well ridge waveguide lasers at 2.1μm wavelength are fabricated by using molecular beam epitaxy. Continuous wave performance and tunability of the lasers are evaluated in a wide temperature range extend to 80°C. Output power of the laser at 30°C exceeds 30mW/facet at driving current of 0.5A, the characteristic temperature T0 is 89K in 0--50°C range. No fast degradation is observed in accelerated aging test at 90°C for those lasers with lower Al content in cladding layers. Temperature tunability of the lasers is 1.36nm/K. Single-mode output with side mode suppression ratios greater than 20dB is achieved in a certain driving current region; current tunability is 8×10-3nm/mA regardless of mode hopping.
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| Keywords:
81.05.Ea
42.55.Px
81.15.Hi
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Published: 01 August 2006
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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42.55.Px
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(Semiconductor lasers; laser diodes)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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