Chin. Phys. Lett.  2006, Vol. 23 Issue (8): 2206-2209    DOI:
Original Articles |
Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects
CHI Yue-Meng;SHI Jun-Jie
State Key Laboratory for Mesoscopic Physics, and School of Physics, Peking University, Beijing 100871
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CHI Yue-Meng, SHI Jun-Jie 2006 Chin. Phys. Lett. 23 2206-2209
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Abstract Considering the three-dimensional confinement of the electrons and holes and the strong built-in electric field (BEF) in the wurtzite InGaN strained coupled quantum dots (QDs), the positively charged donor bound exciton states and interband optical transitions are investigated theoretically by means of a variational method. Our calculations indicate that the emission wavelengths sensitively depend on the donor position, the strong BEF, and the structure parameters of the QD system.
Keywords: 73.21.La      71.35.-y      77.65.Ly      77.84.Bw     
Published: 01 August 2006
PACS:  73.21.La (Quantum dots)  
  71.35.-y (Excitons and related phenomena)  
  77.65.Ly (Strain-induced piezoelectric fields)  
  77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I8/02206
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