Chin. Phys. Lett.  2006, Vol. 23 Issue (8): 2158-2160    DOI:
Original Articles |
Deep InP Gratings for Opto-Electronic Devices Etched by Cl2/CH4/Ar Inductively Coupled Plasma
WANG Jian;TIAN Jian-Bai;XIONG Bing;SUN Chang-Zheng;HAO Zhi-Biao;LUO Yi
Department of Electronic Engineering, Tsinghua University, Beijing 100084
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WANG Jian, TIAN Jian-Bai, XIONG Bing et al  2006 Chin. Phys. Lett. 23 2158-2160
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Abstract Deep InP gratings are etched by Cl2/CH4/Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiNx mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of Cl2/CH4/Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10:1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback AlGaInAs-InP laser.
Keywords: 52.77.Bn      81.65.Cf      42.55.Px     
Published: 01 August 2006
PACS:  52.77.Bn (Etching and cleaning)  
  81.65.Cf (Surface cleaning, etching, patterning)  
  42.55.Px (Semiconductor lasers; laser diodes)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I8/02158
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WANG Jian
TIAN Jian-Bai
XIONG Bing
SUN Chang-Zheng
HAO Zhi-Biao
LUO Yi
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